Double carrier injection in the sidegating effect in GaAs MESFETs

Double injection into the semi-insulating substrate was investigated as a mechanism of sidegating in GaAs MESFETs. A change of gate current with sidegate voltage and a correlation between abrupt variations in drain, gate, and sidegate currents and instabilities in test devices support a physical model in which a gradual decrease of drain current with a nonlinear potential profile across the substrate is caused by low-level double injection and an abrupt decrease of drain current is caused by high-level double injection.<
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