An intelligent-power IC fabricated by SIMOX technology

The authors have succeeded in fabricating an IPIC/SIMOX (intelligent power IC/separation by implanted oxygen) which integrates a power UMOS (U-grooved MOSFET) and a CMOS IC on one chip. The availability of the new IPIC has been verified by evaluating its functional operation. It is noted that SIMOX technology offers great potential for fabrication of future intelligent-power LSIs. The structure and electrical characteristics of the fabricated IPIC are described.<
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