SPICE simulation of thin-film SOI IGFETs using the BSIM2 model

The Berkeley short-channel IGFET (insulated-gate field effect transistor) model (BSIM2) has been successfully used to simulate the operation of fully depleted SOI (silicon-on-insulator) IGFETs. By modifying existing BSIM2 parameter extraction algorithms to account for the characteristics of thin-film transistors, good agreement has been obtained between the measured and simulated performances of a wide variety of these devices.<
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