A SIMS study of the deuterium distribution in SIMOX buried oxides

SIMS (secondary ion mass spectrometry) analysis of deuterium annealed SIMOX (separation by implanted oxygen) samples was used to investigate the interaction of hydrogen with the buried oxide. Deuterium diffused into the SIMOX buried oxide and reacted with the dangling Si bonds, the precursors to oxide traps, to form Si-D. SIMS analysis of deuterium shows that these bonds are distributed uniformly in the buried oxides of all samples examined, including as-implanted samples. Thus, oxygen vacancies and traps are contained throughout the bulk of the SIMOX buried oxides.<
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