Effect of particles on buried oxide defects in SIMOX material

An array of artificial particles composed of silicon dioxide was created by growing a film of SiO/sub 2/ one micron thick on a wafer surface, then patterning and etching the film to create barriers of various sizes and shapes. Two of the more interesting of these shapes are long lines and individual dots. These lines make it practical to analyze the structures by cross-sectional scanning and transmission electron microscopy. The shape of one of the lines after implantation to a dose of 1.8*10/sup 18/ at an implantation temperature of 630 degrees C is shown.<
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