The stoichiometry of thermal oxidation

At a stoichiometrical relation of silicon and oxygen during the growth of a rapid thermal silicon-oxide layer (RTO) the electrical parameters of the corresponding metal-insulator-semiconductor capacitor show significant behavior. Combining the Henry-Dalton law and the Boyle-Mariotte law with the Deal-Grove model allows an estimation of the fundamental (T, t, C) process, parameters, temperature, time and concentration of the reactive gas for a stoichiometrical processing of ultra thin SiO/sub 2/ films. Electrical measurements show the (T, t, C)-dependency of I-V, time dependent dielectric breakdown (TDDB) and C-V measurements especially of direct tunneling currents j/sub DT/, relative difference of tunneling currents /spl Delta//sub RDT/, charge-to-breakdown Q/sub BD/ and interface state density D/sub it/.