Wavelet based non-uniform mesh generation for simulation time reduction of semiconductor device modeling

A new wavelet based non-uniform grid for time domain simulation of active semiconductor devices is presented and a MESFET is simulated using this non-uniform mesh. Non-uniform mesh is implemented and controlled by the wavelet coefficients. A fine mesh can be used where the unknowns are varying rapidly and a coarser mesh where the unknowns are varying slowly. Performance of this method is compared with basic finite difference. A reduction over 80 percent of unknowns in grid with good accuracy in simulation is obtained using this non-uniform mesh. This represents an ongoing effort toward a numerical technique that uses wavelet to solve physical modeling problem of semiconductor devices.