A high-performance and low-noise CMOS image sensor with an expanding photodiode under the isolation oxide

We've realized a 2.5-/spl mu/m square pixel with high saturation electron capacity and sensitivity, which realizes the low dark current as well as triple Qs value of the conventional STI, by expanding the buried photodiode under the isolation oxide, and the sensitivity gain will be 20% higher using the Cu process than is possible with the Al process.