On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaV
_T
) is shown to be primarily due to interface trap generation (DeltaN
_IT
) and significant hole trapping (DeltaN
_OT
) has not been observed. DeltaV
_T
follows power-law time (t) dependence and Arrhenius temperature (T) activation