A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics

An accumulation-mode design for nanometer-scale electromechanical-gate field effect transistors (NEMFETs) is proposed and studied via simulation. In the off state, the gate electrode is in contact with the thin gate dielectric and short-channel effects are effectively suppressed. In the on state, the gate electrode is separated from the thin gate dielectric so that the threshold voltage V
_T
is dynamically lowered and the transistor drive current I
_on
is enhanced, and gate leakage is eliminated. The NEMFET can likely meet performance specifications for low-power applications at 25 nm gate length, and is attractive for scaled supply voltage operation