A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices

We have realized a 0.9nm-EOT TaSix/HfSiON gate stack that exhibits the high electron mobility of 264 cm
²
/Vs @ 0.8MV/cm (86% of thermal SiO
₂
), even after spike annealing at 1000degC. This was achieved by using thermally-stable HfSiON gate dielectrics with plasma nitridation, in which interfacial layer growth due to recoiled oxygen had been successfully suppressed