Numerical modeling for planar spiral inductors in silicon-based radio-frequency integrated circuits

A numerical method to analyze the transient characteristics of planar spiral inductors (PSI) in silicon-based is presented. Applying a locally conformed technique and an alternating-direction implicit (ADI) scheme to the finite-difference time-domain (FDTD) method, the numerical model of the PSI has been developed and an efficient computation is implemented. An equivalent circuit, which includes frequency-independent circuit elements, is also introduced. Various parameters of the PSI structures have been analyzed. The results illustrate that a high degree of accuracy can be obtained by using proposed method.