A class-AB 1.65GHz-2GHz broadband CMOS medium power amplifier

In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0.25/spl mu/m CMOS process. Measurements with a 2.5 V supply voltage show an output power of 18.5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 /spl plusmn/ 0.5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well.