Application of the rapid thermal process: sintering the sputtered aluminum/silicon contact in silicon detector fabrication

Rapid thermal process (RTP) sintering of aluminum metallization has been used in p/sup +/-n junction detector fabrication. For the same thickness of aluminum film and at the same RTP sintering condition, the leakage current of the p/sup +/-n junction detectors with sputtered Al metallization showed at least a 50% improvement after sintering, and no spiking phenomena were observed compared to the detectors with evaporated Al contacts. RTP sintering in 4% H/sub 2//N/sub 2/ ambient passivates the defects introduced by sputtering and the damage caused by the /sup 60/Co irradiation.<
>