1.3-μm InAs quantum-dot laser with high dot density and high uniformity

We realized a triple-stacked 1.3-mum InAs quantum dot (QD) with a high density of 2.4times10
¹¹
cm
^-2
and a high uniformity of below 24 meV that employs an As
₂
source and a gradient composition (GC) strain-reducing layer (SRL) grown on a GaAs substrate. We demonstrated the 1.3-mum wavelength emission of this triple-stacked QD laser with a 0.92-mm cavity length and a cleaved facet at room temperature. In addition, we realized the highest maximum modal gain yet reported of 8.1 cm
^-1
per QD layer at beyond 1.28 mum by using our high-density and high-uniformity QD