HDP-CVD STI oxide process with in situ post deposition laterally enhanced sputter etchback for the reduction of pattern-dependent film topography in deep submicron technologies

This paper introduces a postdeposition pattern-dependent topography-reduction enhancement to the high-density plasma chemical-vapor deposition (HDP-CVD)oxide profile for shallow trench isolation in deep submicron technologies. The enhancement is labeled "laterally enhanced sputter etchback" (L-SEB) and is carried out in situ in the HDP-CVD reactor after film deposition. The L-SEB is set up using O/sub 2/ and Ar at high O/sub 2/ flow. A design of experiment was run to search for optimum gas flow conditions. The optimized process is shown to yield significant lateral "pull-in" of the sizeable HDP oxide cones over large thin-oxide features and flattening of smaller cones over dense small features, without appreciable impact on field oxide (FOX) thickness or corner integrity. This contributes a significant improvement to an STI module that incorporates downstream planarization processes of reverse-tone etch (RTE) and chemical mechanical polishing (CMP). It also allows a start with a thinner film thickness and usage of a smaller lithography compensation factor for the reverse-tone mask, thus facilitating a smaller minimum feature for RTE exposure. These advantages enhance the manufacturability of the STI process module in terms of reducing the starting HDP film thickness,cutting down on etching and polishing times of RTE and CMP, respectively,and yielding better post-CMP within-die and within-wafer FOX uniformities.