Statistical characterization and Monte-Carlo simulation of low-frequency noise variations in foundry AMS/RF CMOS technology

Statistical characterization of low-frequency noise enables the prediction of 1/f noise with dispersions. The impact of downscaling on the low-frequency noise performance of foundry AMS/RF CMOS technology is thus evaluated. Meanwhile, a novel modeling approach uses Monte-Carlo simulation is developed which includes statistical variations of individual device to capture the fluctuations in frequency and amplitude of the low-frequency noise of deep-sub-micrometer CMOS