Avalanche electron emitter arrays using Si ultra-shallow p-n junctions

A silicon avalanche electron emitter array was fabricated using ultrashallow p-n junctions biased in the avalanche region. The devices were fabricated on a p/sup -/ epilayer grown on p/sup +/ substrates. The most promising applications include flat panel displays with high current density and brightness; an electron source for scientific instrumentation; and an electron source in microwave applications, which requires a long and thin rectilinear electron beam.