0.33- mu m millimeter-wave InP-channel HEMTs with high f/sub T/ and f/sub max/

The fabrication of 0.33- mu m AlInAs/InP HEMTs is reported. These InP-channel devices have f/sub T/'s as high as 76 GHz and f/sub max/ of 146 GHz, with extrinsic DC transconductances as high as 610 mS/mm and microwave gains of 12 dB at 30 GHz. Measured breakdown voltages, which exceed 10 V, are higher than those reported for similarly structured InGaAs-channel devices, as was the f/sub T/-L/sub g/ product, which was estimated to be as high as 29 GHz- mu m. It is demonstrated that AlInAs/InP HEMTs have potential for both high-power microwave and high-speed and high-frequency millimeter-wave applications.