3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications

The development of the 10GBASE-LX4 communication standard for aggregated 10-Gb/s rates feeds the need for low-cost laser sources in the 1275-1350-nm wavelength range operating at modulation rates of 3.125 Gb/s. We present comprehensive characterization of wafer fused vertical-cavity surface-emitting lasers with characteristics that meet the IEEE802.3ae specification for 10GBASE-LX4. These include output power greater than 1.5 mW up to 80degC, wavelength around 1340 nm, single-mode emission and modulation at 3.125 Gb/s, and wide open eyes with rise and fall times below 100 ps up to 70degC