Time Resolved and Time Integrated Photoluminescence for Study of Optical Properties of Silicon Quantum Dots

In this paper we report studies of the optical properties of silicon quantum dot structures. From time-resolved and time-integrated photoluminescence measurements we investigate the state-filling effect and carrier lifetime and discuss the parabolic confinement of quantum dot structures. The photoluminescence intensities for different quantum dot levels decay with a stretched exponential function and the decay times are in the range 2 - 60 μs