High-speed 850 nm AlGaAs/GaAs vertical cavity surface emitting laser with low parasitic capacitance fabricated using BCB planarization technique

12.5 Gbps operation of low-k benzocyclobutene (BCB)-planarized 850 nm AIGaAs-based VCSEL is presented. The chip capacitance is 70% reduced from that of conventional SiN-passivated one. The VCSEL exhibits very high relaxation oscillation frequency of 12 GHz with stable operation at 70/spl deg/C over 750 hours.