Demonstration of an InGaAsP/InGaAs multiquantum well active-grating surface-emitting amplifier

The design and operating characteristics of an InGaAsP/InGaAs strained-layer multiquantum-well active-grating surface-emitting amplifier operating at a wavelength of 1.6 mu m are reported. Single-wavelength operation was obtained with 25-dB suppression of amplified spontaneous emission at 150-mW peak power output with a differential quantum efficiency of 24%. This result verifies earlier theoretical predictions that a power output per unit length of approximately 1 W/cm is feasible.<
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