An 8Mb 1T1C ferroelectric memory with zero cancellation and micro-granularity redundancy

New design techniques facilitate a high reliability 1T1C 8Mb ferroelectric random access memory with 0.71u
²
cell operating at 1.5V on a 130nm 5LM Cu process. Zero cancellation increases the cell interrogation voltage by using a nonswitching ferroelectric capacitor to remove charge from the bit line that compensates the linear charge from the cell capacitor. A micro-granularity redundancy approach preserves high repair probability for up to 128 single bit failures. Trim data is stored in 2T2C configuration rows for redundancy, reference, regulator and control logic adjustment