Carrier dynamics in self-assembled quantum-dot materials and devices

This study presents an overview of recent measurements of the dephasing time and gain recovery dynamics in InGaAs/GaAs QD material and devices. Results indicate that the ultrafast gain recovery on a subpicosecond time scale measured at room temperature is related to the presence of several carriers in the excited states of the QD, i.e. to a multiexciton state with several available channels for relaxation.