Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD

1.3- and 1.55-
$mu$
m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs–InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3
$mu$
m) and 2.0 (for 1.55 
$mu$
m) mW single mode power at 25
$^circ$
C, 0.6 mW single mode power at 85
$^circ$
C and lasing operation at
$≫hbox100^circ$
C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-
$mu$
m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-
$mu$
m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.