Undoped thin film FD-SOI CMOS with source/drain-to-gate non-overlapped structure for ultra low leak applications

In this paper, we present an undoped thin film fully-depleted (FD) silicon-on-insulator (SOI) CMOS with source/drain-to-gate non-overlapped structure for ultra low leak (ULL) transistor. The fabricated device achieved a cutoff frequency f/sub T/ of 65GHz with I/sub off/< 0.1pA//spl mu/m (GIDL-free). The proposed inverted-gate implantation/planar-type SOI is practical and low-cost solution for coin-battery applications.