High voltage devices added to a 0.13/spl mu/m high resistivity thin SOI CMOS process for mixed analog-RF circuits

We have added to a 0.13/spl mu/m thin SOI CMOS core process a high competitive SOI NLDEMOS which presents excellent power switch and analog characteristics. Measurements have demonstrated that both drift and BC design rules allow to obtain HV devices (BV > 15V) with a low S.Ron and a low leakage.