Photon counting pixels in CMOS technology for medical X-ray imaging applications

Crystalline silicon (c-Si) technology is attractive for advanced large area imaging applications because of higher transistor mobility, smaller feature sizes and higher density of integration. These benefits of c-Si technology can help expedite the development of high performance circuitry required for better contrast, lower noise, and lower X-ray dose while providing small, high-resolution pixels. In this research, we examine the technology requirements of performing digital mammography tomosynthesis, an advanced diagnostic X-ray imaging modality, using c-Si semiconductor technology. We then present a novel photon counting pixel architecture in CMOS 0.18 /spl mu/m c-Si technology to address the requirements posed by mammography tomosynthesis.