Native defect compensation in III-antimonide bulk substrates

As-grown, undoped III-antimonide bulk substrates contain high concentration of native defects resulting in high residual carrier density. In this paper, we have demonstrated that native defects can be compensated in bulk substrates of GaSb, InSb, and Ga/sub 1-x/In/sub x/Sb via impurity doping and low temperature growth from nonstoichiometric melts and solutions. Decrease in residual carrier concentration up to one order of magnitude at 300 K and three orders of magnitude at 77 K have been achieved.