p/sup +//n/sup -//n/sup +/ cz-Si detectors processed on p-type boron-doped substrates with thermal donor induced space charge sign inversion

We have processed pad detectors on high-resistivity p-type Cz-Si wafers. The resistivity of the boron-doped silicon is approximately 1.8 k/spl Omega/ cm after the crystal growth. The detector processing was carried out using the common procedure for standard n-type wafers, to produce p/sup +//p/p/sup -//n/sup +/ detector structures. During the last process step, i.e., sintering of aluminum electrode, the p-type bulk was turned to n-type through generation of thermal donors (TD). This way, high oxygen concentration p/sup +//n/sup -//n/sup +/ Cz-Si detectors were realized with low temperature process. The full depletion voltage of detectors could be tailored between wide range from 30 V up to close 1000 V by changing heat treatment at 400/spl deg/C-450/spl deg/C duration from 20 to 80 min. The space charge sign inversion (SCSI) in the TD generated devices (from p/sup +//p/sup -//n/sup +/ to p/sup +//n/sup -/(inverted)/n/sup +/) has been verified by transient current technique measurements. The detectors show very small increase of full depletion voltage after irradiations with 24 GeV/c protons up to 5*10/sup 14/ p/cm/sup 2/.