Electrical characterization at a nanometer scale of weak spots in irradiated SiO/sub 2/ gate oxides

In this work, the electrical conduction of irradiated thin SiO/sub 2/ gate oxides of MOS structures has been analyzed at a nanometer scale with a Conductive Atomic Force Microscope (C-AFM). The results have been compared to those obtained on fresh and electrically stressed oxides, demonstrating the capability of the technique to evaluate the electrical damage induced during irradiation.