Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells

We propose and demonstrate a technique for tailoring the emission bandwidth of /spl sim/1.3 μm quantum dot superluminescent light-emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.