A novel method for the modelling and the design of MESFETs and of any kind of heterojunction FET

A novel method for modelling field effect transistors (FETs) is described. It is applied to the study of a number of devices, including FETs, MODFETs, SISFETs, DMTs and multiple HEMTs (high-electron-mobility transistors). This method includes the most important physical effects in these devices, but is very simple and easy to implement on a microcomputer. It is used for the control of technological device processes realized in the laboratory as well as for the design of more efficient structures.<
>