Total ionizing dose effects on the analog performance of a 0.13 /spl mu/m CMOS technology

This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 /spl mu/m CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad (SiO/sub 2/) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.