Silicon-carbide MESFET-based 400/spl deg/C MEMS sensing and data telemetry

A prototype high-temperature silicon-carbide (SiC) MESFET-based microelectromechanical systems (MEMS) sensing and date telemetry module is reported for harsh environment applications. The module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and an on-board spiral loop serving as an inductor for the LC resonator and also as a telemetry antenna. The system demonstrates a high-temperature performance up to 400/spl deg/C, limited by the SiC MESFET characteristics, and achieves a telemetry distance of 1m.