Temperature behavior of AlGaN/GaN on SiC HEMTs

This study presents extensive characterization and comparison of current GaN/SiC devices (from 5 US manufacturers) across temperature (-25-125/spl deg/C). The changes with temperature for: saturated current (I/sub dss/), transconductance (g/sub m/), and maximum stable gain (MSG) are measured and statistics are studied. The typical temperature-coefficients (TC) are established for I/sub dss/, g/sub m/, and MSG in GaN technology. This information is useful for MMIC designs. The minimum temperature coefficients compare well with theoretical expectations. Finally, a correlation is observed between the temperature behavior of RF and DC parameters.