Biased ECR CVD oxide deposition using TEOS and TMCTS

The authors have studied oxide deposition in a biased ECR CVD reactor using TEOS (tetraethylorthosilicate) and TMCTS (tetramethylcyclotetrasiloxane) as Si sources. Oxide films with good material quality are deposited as long as O/sub 2//TEOS and O/sub 2//TMCTS flow rate ratios are greater than 2 and 3 respectively. The deposition rate using TMCTS is about four times higher than using TEOS under similar condition. The step coverage of oxide is found to be excellent when additional RF bias is applied on the substrate during the deposition. They have demonstrated that trenches with high aspect ratios (>1.5) can be filled without voids.<
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