Sputtered TiN performance as an anti-reflective coating in backend sub-um i-line lithography process

With scaling, the need for reliable metal interconnect is growing rapidly to prevent the electromigration failure. One of the major factors that influence EM failure is the notched metal line which stems from reflective notching in photo processing. This work presents the use of TiN as an ARC layer in sub- mu m process which has achieved a production worthy status.<
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