Thin film microstructure simulation of RF bias planarized metal interconnects using a ballistic deposition model

A ballistic deposition model, SIMBAD, has been extended to simulate the RF biased sputter planarization process. The model provides qualitative depictions of the thin film microstructure of metal deposited over integrated circuit topography. The model successfully predicts the increased planarity and filling of films deposited over high aspect ratio features with an applied substrate bias. Columnar features, low density regions, voids, and cracks are also successfully depicted. Confirmation of SIMBAD simulations with tungsten films is demonstrated.<
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