Multilevel interconnects using Al CVD

Summary form only given. The authors present results on the use of Al interconnects deposited by chemical vapor deposition (CVD). In comparison to sputtered Al, Al CVD technology can fill higher aspect ratio structures like vias, and in comparison to W CVD, Al CVD offers a lower resistivity metal. Thus, lower resistivity Al via-studs can be made without sacrificing the good hole fill of W CVD processes. By maintaining an Al/Al interface at the via/interconnection interface, the possibility exists for eliminating the recently published lower electromigration lifetime of the W/Al interface. The Al CVD process recipe, yield data, and reliability data for two-level via chains are presented.<
>