Fast DNBTI components in p-MOSFET with SiON dielectric

For the first time, we perform a systematic investigation of the fast components of dynamic negative biased temperature instability (DNBTI) in p-MOSFET with an ultrathin SiON gate dielectric. Experimental results unambiguously show a fast DNBTI component measured by a recently developed fast measurement method, and this component is due to trapping and detrapping of hole traps N/sub ot/ in SiON. The cumulative degradation increases with increasing stress frequency. Model simulations are in excellent agreement with all experimental data.