Magnetization switching by spin-polarized current in low-resistance magnetic tunnel junction with MgO [001] barrier

Current-induced magnetization switching (CIMS) was demonstrated in low resistance magnetic tunnel junctions (MTJs) with thin MgO [001] barrier. The resistance change by CIMS was more than 100%, which is much larger than the previous report in Al-O based MTJs. The switching current density was about 2/spl times/10/sup 7/ A/cm/sup 2/, which was comparable with that reported values in metallic multilayers.