Silicon carbide power semiconductor module development for a high temperature 10 kW AC drive

A silicon carbide power module has been developed to demonstrate a high-temperature, 10 kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150 /spl deg/C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180 /spl deg/C.