Metamorphic 50 nm InAs-channel HEMT

A 50 nm gate length metamorphic HEMT with InAs-channel and InAlAs-barriers for high frequency low power applications has been developed. Using a composite channel layout with backside doping an on-state breakdown voltage of 1.2 V and a g/sub mmax//g/sub o/ ratio of four at V/sub DS/=1.0 V was achieved. A low g/sub m/ dispersion of only 5 % was measured. The realized three-stage 70 GHz LNA shows a power dissipation as low as 1.9 mW with an associated small signal gain of 6 dB.