Realization of square quantum-well structure InP/GaInAs/InP by organometallic vapor phase epitaxy

The InP/Ga/sub 0.47/In/sub 0.53/As/InP structures were grown on InP [001] substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) and analyzed by X-ray crystal truncation rod (CTR) scattering measurement. It was demonstrated that an actually square quantum-well structure InP/GaInAs/InP can be realized using the OMVPE by controlling the growth temperature and the growth interruption time. It was obvious that the quantum-well structure was very close to the designed one at the atomic scale for the sample of which growth interruption time was 30 s and growth temperature was 560/spl deg/C. In order to determine the growth conditions, the X-ray CTR scattering measurement was essentially important, since it had been unable to clarify the interface structure without this measurement technique.