Advanced SEM-based metrology of systematic defects

This paper describes a quantitative SEM-based inspection methodology implemented in IBM's 300 mm FAB to detect, monitor, and resolve systematic defect mechanisms at the 90 nm technology node. Two examples are described: (a) corrosion of copper interconnects at the bottom of isolated vias, leading to electrical opens, and (b) channels in the dielectric separating two metal line ends, resulting in electrical shorts. In both cases, this technique provided quantitative feedback unobtainable via conventional inspection techniques.