Micromachined inverted F antenna for integration on low resistivity silicon substrates

This letter addresses the integration of a 24-GHz inverted-F antenna on a low resistivity silicon substrate, using micromachining post-processing techniques compatible with commercial Si/SiGe active device processes. By suspending the radiator on a 2.4mm/sup 2/ large polymer membrane an on-chip antenna with -0.7 dBi gain has been realized.