Very high-density (23 fF/μm2) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric

A very high density of 23 fF/μm
²
has been measured in RF metal-insulator-metal (MIM) capacitors which use high-/spl kappa/ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits.