Nanocrystalline top-gate thin film transistors deposited at low temperature by hot-wire CVD on glass

n and p-type nanocrystalline thin film transistors in coplanar top gate configuration have been processed at low temperature. All silicon layers (intrinsic, n and p-type) have been deposited by hot-wire chemical vapor deposition on glass substrates covered with SiO/sub 2/. Gate insulation has been achieved by means of high quality sputtered SiO/sub 2/. The maximum temperature reached during the whole process was 200/spl deg/C. Very high field effect mobility has been obtained for both kinds of devices, with values of 22 cm V/sup -1/s/sup -1/ for the electron mobility and around 1.0 cm V/sup -1/s/sup -1/ for the hole mobility.